(Hong Kong)
Product Summary
The 2sk410 is a silicon n-channel mosfet. Application of the 2sk410 includes HF/VHF power amplifier.
Parametrics
2sk410 absolute maximum ratings: (1) Drain to source voltage VDSS: 180V; (2) Gate to source voltage VGSS: ±20V; (3) Drain current ID: 8A; (4) Channel dissipation Pch: 120W; (5) Channel temperature Tch: 150°C; (6) Storage temperature Tstg: -55 to +150°C.
Features
2sk410 features: (1) High breakdown voltage; (2) You can decrease handling current; (3) Included gate protection diode; (4) No secondary-breakdow; (5) Wide area of safe operation; (6) Simple bias circuitry; (7) No thermal runaway.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 2SK410 |
Other |
|
Data Sheet |
Negotiable |
|
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|
2SK4100LS |
Other |
|
Data Sheet |
Negotiable |
|
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 |
2SK4103(TE16L1,NQ) |
|
MOSFET N-CH 500V 5A PW-MOLD |
Data Sheet |
|
|
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|
2SK4101FG |
Other |
|
Data Sheet |
Negotiable |
|
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|
2SK4101FS |
Other |
|
Data Sheet |
Negotiable |
|
||||||
|
2SK4101LS |
Other |
|
Data Sheet |
Negotiable |
|
||||||
 |
2SK4107(F,T) |
Toshiba |
MOSFET N-Ch FET VDSS 500V RDS 0.33 Ohm Yfs 8.5 |
Data Sheet |
Negotiable |
|
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|
2SK4108(F,T) |
Toshiba |
MOSFET N-Ch FET VDSS 500V RDS 0.21 Ohm Yfs 14S |
Data Sheet |
Negotiable |
|
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