Product Summary

The K9F1G08ROB-JIBO is a NAND Flash Memory. Offered in 128Mx8bit the K9F1G08ROB-JIBO is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 200μs on the 2112-byte page and an erase operation can be performed in typical 2ms on a 128K-byte block. Data in the data page can be read out at 30ns(50ns with 1.8V device) cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data.

Parametrics

K9F1G08ROB-JIBO absolute maximum ratings: (1)Voltage on any pin relative to VSS, VIN/OUT: -0.6 to + 4.6V; VCC: -0.6 to + 4.6; (2)Temperature Under Bias, TBIAS: -10 to +125℃; (3)Storage Temperature, TSTG: -65 to +150℃; (4)Short Circuit Current, Ios: 5 mA.

Features

K9F1G08ROB-JIBO features: (1)Voltage Supply, 1.8V device(K9F1G08R0A): 1.65V~1.95V; 3.3V device(K9F1G08U0A): 2.7 V ~3.6 V; (2)Organization, Memory Cell Array: (128M + 4,096K)bit x 8bit; Data Register: (2K + 64)bit x8bit; Cache Register: (2K + 64)bit x8bit; (3)Automatic Program and Erase, Page Program: (2K + 64)Byte; Block Erase: (128K + 4K)Byte; (4)Page Read Operation, Page Size: 2K-Byte; Random Read: 25μs(Max.); Serial Access: 30ns(Min.)-3.3v device; 50ns(Min.)-1.8v device; (5)Fast Write Cycle Time, Program time: 200μs(Typ.); Block Erase Time: 2ms(Typ.); (6)Command/Address/Data Multiplexed I/O Port; (7)Hardware Data Protection, Program/Erase Lockout During Power Transitions; (8)Reliable CMOS Floating-Gate Technology, Endurance: 100K Program/Erase Cycles; Data Retention: 10 Years; (9)Command Register Operation; (10)Cache Program Operation for High Performance Program; (11)Intelligent Copy-Back Operation; (12)Unique ID for Copyright Protection.

Diagrams

K9F1G08ROB-JIBO block diagram