(Hong Kong)
Product Summary
The PBSS4240DPN is an NPN/PNP low VCEsat transistor pair in a SOT457 (SC-74) plastic package. The applications of the PBSS4240DPN include Power management: Complementary MOSFET driver, Dual supply line switching; Peripheral driver: Half and full bridge motor drivers, Multi-phase stepper motor driver.
Parametrics
PBSS4240DPN absolute maximum ratings: (1)VCBO, collector-base voltage open emitter: 40 V; (2)VCEO, collector-emitter voltage open base: 40 V; (3)VEBO, emitter-base voltage open collector: 5V; (4)IC, collector current (DC), NPN: 1.35 A; PNP: -1.1 A; (5)ICRP repetitive peak collector current note 1: 2A; (6)ICM peak collector current single peak: 3A; (7)IB base current (DC): 300 mA; (8)IBM peak base current: 1A; (9)Ptot total power dissipation Tamb ≤ 25℃: 370 mW; Tamb ≤ 25℃: 310 mW; Tamb ≤ 25℃: 1.1 W; (10)Tstg storage temperature: -65 +150℃; (11)Tj, junction temperature: 150℃; (12)Tamb, operating ambient temperature: -65 +150℃.
Features
PBSS4240DPN features: (1)Low collector-emitter saturation voltage VCEsat; (2)High collector current capability IC and ICM; (3)High collector current gain hFE at high IC; (4)High efficiency leading to reduced heat generation; (5)Reduced printed-circuit board area requirements.
Diagrams
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Pricing (USD) |
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 PBSS4240DPN |
Other |
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Data Sheet |
Negotiable |
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PBSS4240DPN T/R |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS BISS TAPE-7 |
Data Sheet |
Negotiable |
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PBSS4240DPN,115 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS BISS TAPE-7 |
Data Sheet |
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