(Hong Kong)
Product Summary
The BFG540 is an NPN silicon planar epitaxial transistor. THE BFG540 is intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optical systems. The BFG540 is mounted in plastic SOT143B and SOT143R packages.
Parametrics
BFG540 absolute maximum ratings: (1)VCBO, collector-base voltage open emitter: 20 V; (2)VCES, collector-emitter voltage RBE = 0: 15 V; (3)VEBO, emitter-base voltage open collector: 2.5 V; (4)IC, DC collector current: 120 mA; (5)Ptot, total power dissipation Ts ≤ 60 °C; note 1: 400 mW; (6)Tstg, storage temperature: -65 to +150 °C; (7)Tj, junction temperature: 150 °C.
Features
BFG540 features: (1)High power gain; (2)Low noise figure; (3)High transition frequency; (4)Gold metallization ensures excellent reliability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 BFG540,215 |
NXP Semiconductors |
Transistors RF Bipolar Small Signal TAPE7 TNS-RFSS |
Data Sheet |
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BFG540/X |
Other |
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Data Sheet |
Negotiable |
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BFG540/X,215 |
NXP Semiconductors |
Transistors RF Bipolar Small Signal NPN 15V 9GHZ |
Data Sheet |
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BFG540/XR |
Other |
|
Data Sheet |
Negotiable |
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BFG540/XR,215 |
NXP Semiconductors |
Transistors RF Bipolar Small Signal Single NPN 15V 120mA 400mW 100 9GHz |
Data Sheet |
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BFG540W |
Other |
|
Data Sheet |
Negotiable |
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BFG540W T/R |
NXP Semiconductors |
Transistors RF Bipolar Small Signal TAPE-7 TNS-RFSS |
Data Sheet |
Negotiable |
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BFG540W,115 |
NXP Semiconductors |
Transistors RF Bipolar Small Signal TAPE-7 TNS-RFSS |
Data Sheet |
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