IRF1010NS

advanced HEXFET power MOSFET, 290A, ±20V, 180W, 18mJ, TO-262

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Price:: US $2.20~2.50 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 100 :	2.50 / Piece
101 ~ 800 :	2.40 / Piece
801 ~ 1600 :	2.20 / Piece

PartNumber:: IRF1010NS

Brand:: International Rectifier - IR | Pack: | D/C:

Availability:: Supply Ability: 8000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-06-23

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Part Number:IRF1010NS
US $2.20 - 2.50
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Product Summary

The irf1010ns is an advanced HEXFET power MOSFET from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the irf1010ns is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The irf1010ns provides the highest power capability and the lowest possible on resistance in any existing surface mount package.The through-hole version of the The irf1010ns is available for low-profile applications.

Parametrics

irf1010ns absolute maximum ratings: (1) Continuous Drain Current, VGS@10V, ID@Tc=25°C, ID@Tc=25°C: 85A; (2) Continuous Drain Current, VGS@10V, ID@Tc=100°C: 60A; (3) Pulsed Drain Current IDM: 290A; (4) Power Dissipation PD@Tc=25°C: 180W; (5) Gate-to-Source Voltage VGS: ±20V; (6) Avalanche Current IAR: 43A; (7) Repetitive Avalanche Energy EAR: 18mJ; (8) Peak Diode Recovery dv/dt, dv/dt: 3.6V/ns; (9) Operating Junction and Storage Temperature Range Tj, Tstg: -55 to +175°C.

Features

irf1010ns features: (1) Advanced Process Technology; (2) Ultra Low On-Resistance; (3) Dynamic dv/dt Rating; (4) 175°C Operating Temperature; (5) Fast Switching; (6) Fully Avalanche Rated.