Product Summary

The irf2804l is an automotive MOSFET. Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175℃ junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Parametrics

irf2804l absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V (Silicon Limited): 270 A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V (See Fig. 9): 190A; (3)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V (Package Limited): 75A; (4)IDM, Pulsed Drain Current: 1080A; (5)PD @TC = 25℃, Maximum Power Dissipation: 300 W; (6)Linear, Derating Factor: 2.0 W/℃; (7)VGS, Gate-to-Source Voltage: ±20 V; (8)EAS, Single Pulse Avalanche Energy (Thermally Limited): 540mJ; (9)EAS, (tested) Single Pulse Avalanche Energy Tested Value: 1160mJ; (10)IAR, Avalanche Current: See Fig.12a,12b,15,16 A; (11)EAR, Repetitive Avalanche Energy: See Fig.12a,12b,15,16 mJ; (12)TJ, TSTG, Operating Junction and Storage Temperature Range: -55 to 175℃; (13)Soldering Temperature, for 10 seconds: 300 (1.6mm from case); (14)Mounting torque, 6-32 or M3 screw: 10 lbf·in (1.1N·m).

Features

irf2804l features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)175℃ Operating Temperature; (4)Fast Switching; (5)Repetitive Avalanche Allowed up to Tjmax; (6)Lead-Free.

Diagrams

irf2804l block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF2804L
IRF2804L
International Rectifier
MOSFET N-CH 40V 75A TO-262
Data Sheet
1-150: $2.32
IRF2804LPBF
IRF2804LPBF
International Rectifier
MOSFET MOSFT 40V 280A 2.3mOhm 160nC
Data Sheet
0-1: $3.40
1-25: $2.33
25-100: $1.73
100-250: $1.66