Product Summary
The irfp264npbf is a HEXFET Power MOSFET. The irfp264npbf from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of the irfp264npbf, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
irfp264npbf absolute maximum ratings: (1)ID, @ TC = 25 ℃ Continuous Drain Current, VGS @ 10V: 44 A; (2)ID, @ TC = 100 ℃ Continuous Drain Current, VGS @ 10V: 31 A; (3)IDM, Pulsed Drain Current: 170 A; (4)EAS, Single Pulse Avalanche Energy: 520 mJ; (5)IAR, Avalanche Current: 25 A; (6)EAR, Repetitive Avalanche Energy: 38 mJ; (7)PD, @TC = 25 ℃ Power Dissipation: 380 W; (8)Linear Derating Factor: 2.6 W/℃; (9)VGS, Gate-to-Source Voltage: ±20 V; (10)dv/dt, Peak Diode Recovery dv/dt: 8.7 V/ns; (11)TJ, Operating Junction and: -55 to +175 ℃; (12)TSTG, Storage Temperature Range: -55 to +175 ℃; (13)Soldering Temperature, for 10 seconds: 300 ℃; (14)Mounting torqe, 6-32 or M3 screw: 10 lbfin.
Features
irfp264npbf features: (1)Advanced Process Technology; (2)Dynamic dv/dt Rating; (3)175 ℃ Operating Temperature; (4)Fast Switching; (5)Fully Avalanche Rated; (6)Ease of Paralleling; (7)Simple Drive Requirements; (8)Lead-Free.
Diagrams
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![]() IRFP264NPBF |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 250V 44 Amp |
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![]() Negotiable |
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![]() IRFP044 |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 60V 57 Amp |
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![]() Negotiable |
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![]() IRFP044, SiHFP044 |
![]() Other |
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![]() IRFP044N |
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![]() MOSFET N-CH 55V 53A TO-247AC |
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![]() IRFP044NPBF |
![]() International Rectifier |
![]() MOSFET MOSFT 55V 49A 20mOhm 40.7nCAC |
![]() Data Sheet |
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![]() IRFP044PBF |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 60V 57 Amp |
![]() Data Sheet |
![]() Negotiable |
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![]() IRFP048 |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 60V 70 Amp |
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