Product Summary

The ixfh120n2p is an N-channel enhancement mode PolarHT HiPerFET Power MOSFET. The applications of it include: (1)DC-DC converters; (2)Uninterruptible Power Supplies (UPS); (3)Battery chargers ; (4)Switched-mode and resonant-mode power supplies; (5)DC choppers; (6)Temperature and lighting controls; (7)Low voltage relays.

Parametrics

ixfh120n2p absolute maxing ratings: (1)On the condition of TJ=25℃ to 150℃, VDSS: max=200V; (2)On the conditions of TJ=25℃ to 150℃; RGS=1MΩ, VDGR: max=200V; (3)On the condition of Continuous, VGS: max=±20V; (4)On the condition of Transient, VGSM: max=±30V; (5)On the condition of TC=25℃, ID25: max=120A; (6)On the conditions of TC=25℃, pulse width limited by TJM, IDM: max=75A; (7)On the condition of TC=25℃, IAR: max=300A; (8)On the condition of TC=25℃, EAR: max=60mJ; (9)On the conditions of IS≤IDM, di/dt≤100A/μs, VDD≤VDSS, TJ≤150℃, RG=2Ω, dv/dt: max=10V/ns; (10)On the condition of TC = 25℃, PD: max=714W.

Features

ixfh120n2p features: (1)International standard packages; (2)Low package inductance-easy to drive and to protect; (3)Unclamped Inductive Switching (UIS) rated.

Diagrams

ixfh120n2p package dimensions