Product Summary

The mj4035 is a medium-power complementary silicon transistor. The mj4035 designed for use as output devices in complementary general purpose amplifier applications.

Parametrics

mj4035 absolute maximum ratings: (1)Collector-Emitter Voltage, VCEO: 100 V; (2)Collector-Base Voltage, VCBO: 100 V; (3)Emitter-Base Voltage, VEBO: 5.0 V; (4)Collector Current-Continuous-Peak, LC: 16 A; (5)Base Current,LB: 0.5 A; (6)Total Power Dissipation, PD: 150 W, 0.857 W/℃; (7)Operating and Storage Junction Temperature Range, TJ, TSTG: -65 to +200 ℃.

Features

mj4035 features: (1)High Gain Darlington Performance; (2)DC Current Gain hFE = 3500 @ lc = 10 A; (3)Monolithic Construction with Built-in Base-Emitter Shunt Resistor.

Diagrams

mj4035 block diagram

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