(Hong Kong)
Product Summary
The ra08h1317m is an 8-watt RF MOSFET Amplifier Module for 12.5-volt portable/ mobile radios that operate in the 135- to 175-MHz range. The battery of the ra08h1317m can be connected directly to the drain of the enhancement-mode MOSFET transistors. The ra08h1317m is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
Parametrics
ra08h1317m absolute maximum ratings: (1)VDD, Drain Voltage: 16 V; (2)VGG, Gate Voltage: 4 V; (3)Pin, Input Power: 40 mW; (4)Pout, Output Power: 10 W; (5)Tcase(OP), Operation Case Temperature Range: -30 to +90 ℃; (6)Tstg, Storage Temperature Range: -40 to +110 ℃.
Features
ra08h1317m features: (1)Enhancement-Mode MOSFET Transistors; (2)Pout ＞ 8W @ VDD=12.5 V, VGG=3.5 V, Pin=20 mW; (3)ηT ＞ 40% @ Pout=8 W (VGG control), VDD=12.5 V, Pin=20 mW; (4)Broadband Frequency Range: 135 to 175 MHz; (5)Low-Power Control Current IGG=1 mA (typ) at VGG=3.5 V; (6)Module Size: 30 × 10 × 5.4 mm; (7)Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power.
Diagrams
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RA08N1317M |
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