SST39VF1601-70-4C-EK

Product Summary

The sst39vf1601-70-4c-ek is an 1M x16, 2M x16, and 4M x16 respectively, CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SSTs proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The sst39vf1601-70-4c-ek writes (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x16 memories. The sst39vf1601-70-4c-ek is suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, the sst39vf1601-70-4c-ek significantly improves performance and reliability, while lowering power consumption. The sst39vf1601-70-4c-ek inherently uses less energy during Erase and Program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application.

Parametrics

sst39vf1601-70-4c-ek absolute maximum ratings: (1)Temperature Under Bias: -55°C to +125°C; (2)Storage Temperature: -65°C to +150°C; (3)D. C. Voltage on Any Pin to Ground Potential: -0.5V to VDD+0.5V; (4)Transient Voltage (<20 ns)on Any Pin to Ground Potential: -2.0V to VDD+2.0V; (5)Voltage on A9 Pin to Ground Potential: -0.5V to 13.2V; (6)Package Power Dissipation Capability (Ta = 25°C): 1.0W; (7)Surface Mount Lead Soldering Temperature (3 Seconds): 240°C; (8)Output Short Circuit Current1: 50 mA.

Features

sst39vf1601-70-4c-ek features: (1)Single Voltage Read and Write Operations: 2.7-3.6V; (2)Superior Reliability; (3)Low Power Consumption (typical values at 5 MHz); (4)Hardware Block-Protection/WP# Input Pin; (5)Sector-Erase Capability: Uniform 2 KWord sectors; (6)Block-Erase Capability: Uniform 32 KWord blocks; (7)Chip-Erase Capability; (8)Erase-Suspend/Erase-Resume Capabilities; (9)Hardware Reset Pin (RST#); (10)Security-ID Feature: SST: 128 bits; User: 128 bits; (11)Fast Read Access Time; (12)Latched Address and Data; (13)Fast Erase and Word-Program:; (14)Automatic Write Timing: Internal VPP Generation; (15)End-of-Write Detection; (16)CMOS I/O Compatibility; (17)JEDEC Standard.

Diagrams