(Hong Kong)
Product Summary
The 2N6213 is a PNP high power silicon transistor.
Parametrics
2N6213 absolute maximum ratings: (1)Collector-Emitter Voltage, VCEO: 350 Vdc; (2)Collector-Base Voltage, VCBO: 400 Vdc; (3)Emitter-Base Voltage, VEBO: 6.0 Vdc; (4)Base Current, IB: 1.0 Adc; (5)Collector Current, IC: 2.0 Adc; (6)Total Power Dissipation, @ TA = +25℃, PT: 3.0W; @ TC = +25℃, PT: 35W; (7)Operating & Storage Temperature, Top, Tstg: -55 to +200℃.
Features
2N6213 features: (1)Collector-Emitter Cutoff Current, VCE = 150 Vdc, ICEO: 5.0 mAdc; (2)Collector-Emitter Cutoff Current, VCE = 360 Vdc, VBE = 1.5 Vdc, ICEX: 0.5mAdc; (3)Collector-Base Cutoff Current, VCB = 400 Vdc, ICBO: 15mAdc; (4)Emitter-Base Cutoff Current, VEB = 6.0 Vdc, IEBO: 0.5 mAdc.
Diagrams
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 2N6213 |
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Negotiable |
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2N6211 |
Other |
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Negotiable |
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2N6212 |
Other |
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2N6213 |
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Negotiable |
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2N6216 |
Other |
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Negotiable |
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2N6217 |
Other |
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Data Sheet |
Negotiable |
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2N6226 |
Other |
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Negotiable |
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