Product Summary

The 2n3992 is an npn power switching silicon transistor.



Parametrics

2n3992 absolute maximum ratings: (1)Collector-Emitter Voltage VCEO: 80 Vdc; (2)Collector-Base Voltage VCBO: 100 Vdc; (3)Emitter-Base Voltage VEBO: 8.0 Vdc; (4)Base Current IB: 0.5 Adc; (5)Collector Current IC: 5.0 Adc; (6)Total Power Dissipation @ TA = +25 0 C (2)PT: 2.0 W; (7)Operating & Storage Junction Temperature Range TJ, Tstg: -65 to +200°C.

Features

2n3992 features: (1)Collector-Emitter Breakdown Voltage IC = 50 mAdc V(BR)CEO: 80 Vdc; (2)Collector-Emitter Breakdown Voltage IC = 10 mAdc V(BR)CBO: 100 Vdc; (3)Collector-Emitter Cutoff Current VCE = 60 Vdc ICEO: 10 μAdc; (4)Collector-Emitter Cutoff Current VCE = 80 Vdc, VBE = 0 ICES: 200 hAdc; (5)Emitter-Base Cutoff Current VEB = 5.0 Vdc IEBO: 200 mAdc.

Diagrams

2n3992 pin connection