Product Summary

The BC857C is a PNP Silicon AF Transistor.

Parametrics

BC857C absolute maximum ratings: (1)Collector-emitter voltage VCEO: 45V; (2)Collector-base voltage VCBO: 50V; (3)Collector-emitter voltage VCES: 50V; (4)Emitter-base voltage VEBO: 5V; (5)DC collector current IC: 100mA; (6)Peak collector current ICM: 200mA; (7)Peak base current IBM: 200mA; (8)Peak emitter current IEM: 200mA; (9)Total power dissipation, TS = 124℃ Ptot: 250mW; (10)Junction temperature Tj: 150℃; (11)Storage temperature Tstg -:65 to 150℃.

Features

BC857C features: (1)For AF input stages and driver applications; (2)High current gain; (3)Low collector-emitter saturation voltage; (4)Low noise between 30 Hz and 15 kHz; (5)Complementary types: BC846W, BC847W, BC848W, BC849W, BC850W (NPN).

Diagrams

BC857C pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BC857C
BC857C
Taiwan Semiconductor
Transistors Bipolar (BJT) Transistor 200mW
Data Sheet
0-3000: $0.01
3000-6000: $0.01
BC857C /T3
BC857C /T3
NXP Semiconductors
Transistors Bipolar (BJT) TRANS GP TAPE-13
Data Sheet
Negotiable 
BC857C,215
BC857C,215
NXP Semiconductors
Transistors Bipolar (BJT) PNP GP 45V 100mA
Data Sheet
0-1: $0.03
1-25: $0.01
25-100: $0.01
100-250: $0.01
BC857C,235
BC857C,235
NXP Semiconductors
Transistors Bipolar (BJT) TRANS GP TAPE-13
Data Sheet
0-1: $0.08
1-25: $0.07
25-100: $0.05
100-250: $0.03
BC857C_D87Z
BC857C_D87Z
Fairchild Semiconductor
Transistors Bipolar (BJT) SOT-23 PNP GP AMP
Data Sheet
Negotiable 
BC857C-7
BC857C-7
Diodes Inc.
Transistors Bipolar (BJT) PNP BIPOLAR
Data Sheet
Negotiable 
BC857C-7-F
BC857C-7-F
Diodes Inc.
Transistors Bipolar (BJT) BIPOLAR TRANSISTOR PNP SOT-23
Data Sheet
0-1: $0.06
1-10: $0.05
10-100: $0.03
100-500: $0.02
BC857CDW1T1
BC857CDW1T1
ON Semiconductor
Transistors Bipolar (BJT) 100mA 50V Dual PNP
Data Sheet
Negotiable