(Hong Kong)
Product Summary
The BC857C is a PNP Silicon AF Transistor.
Parametrics
BC857C absolute maximum ratings: (1)Collector-emitter voltage VCEO: 45V; (2)Collector-base voltage VCBO: 50V; (3)Collector-emitter voltage VCES: 50V; (4)Emitter-base voltage VEBO: 5V; (5)DC collector current IC: 100mA; (6)Peak collector current ICM: 200mA; (7)Peak base current IBM: 200mA; (8)Peak emitter current IEM: 200mA; (9)Total power dissipation, TS = 124℃ Ptot: 250mW; (10)Junction temperature Tj: 150℃; (11)Storage temperature Tstg -:65 to 150℃.
Features
BC857C features: (1)For AF input stages and driver applications; (2)High current gain; (3)Low collector-emitter saturation voltage; (4)Low noise between 30 Hz and 15 kHz; (5)Complementary types: BC846W, BC847W, BC848W, BC849W, BC850W (NPN).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 BC857C |
Taiwan Semiconductor |
Transistors Bipolar (BJT) Transistor 200mW |
Data Sheet |
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BC857C /T3 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS GP TAPE-13 |
Data Sheet |
Negotiable |
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BC857C_D87Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) SOT-23 PNP GP AMP |
Data Sheet |
Negotiable |
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 |
BC857C-7 |
Diodes Inc. |
Transistors Bipolar (BJT) PNP BIPOLAR |
Data Sheet |
Negotiable |
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 |
BC857CDW1T1 |
ON Semiconductor |
Transistors Bipolar (BJT) 100mA 50V Dual PNP |
Data Sheet |
Negotiable |
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BC857CDW1T1G |
ON Semiconductor |
Transistors Bipolar (BJT) 100mA 50V Dual PNP |
Data Sheet |
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BC857CLT1 |
ON Semiconductor |
Transistors Bipolar (BJT) 100mA 50V PNP |
Data Sheet |
Negotiable |
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BC857CLT1G |
ON Semiconductor |
Transistors Bipolar (BJT) 100mA 50V PNP |
Data Sheet |
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