Product Summary

The BDX54C is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. It is intented for use in hammer drivers, audio amplifiers and other medium power linear and switching applications. The applications of the BDX54C include audio amplifiers, linearand switching industrial equipment.

Parametrics

BDX54C absolute maximum ratings: (1)VCBO Collector-Base Voltage (IE = 0): 100 V; (2)VCEO Collector-Emitter Voltage (IB = 0): 100 V; (3)VEBO Emitter-base Voltage (IC = 0): 5 V; (4)IC Collector Current: 8 A; (5)ICM Collector Peak Current (repetitive): 12 A; (6)IB Base Current: 0.2 A; (7)Ptot Total Dissipation at Tc ≤ 25 ℃: 60 W; (8)Ts tg Storage Temperature: -65 to 150 ℃; (9)Tj Max. Operating Junction Temperature: 150 ℃.

Features

BDX54C features: ST Microelectronics preferred salestypes.

Diagrams

BDX54C block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BDX54C
BDX54C
Fairchild Semiconductor
Transistors Darlington PNP Darlington 8A 100V
Data Sheet
0-1: $0.32
1-25: $0.29
25-100: $0.25
100-250: $0.22
BDX54CG
BDX54CG
ON Semiconductor
Transistors Darlington 8A 100V Bipolar Power PNP
Data Sheet
0-1: $0.53
1-25: $0.43
25-100: $0.37
100-500: $0.29
BDX54C-S
BDX54C-S
Bourns
Transistors Darlington 100V 8A PNP
Data Sheet
0-5950: $0.35
5950-15000: $0.32
BDX54CTU
BDX54CTU
Fairchild Semiconductor
Transistors Darlington PNP Darlington 8A 100V
Data Sheet
0-1: $0.39
1-25: $0.30
25-100: $0.26
100-250: $0.23