(Hong Kong)
Product Summary
The BSM50GGD120DN2 is an IGBT power module.
Parametrics
BSM50GGD120DN2 absolute maximum ratings: (1)Collector-emitter voltage, VCE: 1200 V; (2)Collector-gate voltage RGE = 20 kΩ, VCGR: 1200 V; (3)Gate-emitter voltage, VGE: ± 20 V; (4)DC collector current TC = 25℃, IC: 78 A; (5)DC collector current, TC = 80℃ IC: 50 A; (6)Pulsed collector current, tp = 1 ms TC = 25℃: 156 A; (7)Pulsed collector current, tp = 1 ms TC = 80℃: 100 A; (8)Power dissipation per IGBT, TC = 25℃, Ptot: 400 W; (9)Chip temperature, Tj: + 150℃.
Features
BSM50GGD120DN2 features: (1)Half-bridge; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.
Diagrams
