Product Summary
The GT28F008B3T90 is a 3V Advanced Boot Block Flash Memory. Intel provides the most flexible voltage solution in the flash industry, providing three discrete voltage supply pins: VCC for read operation, VCCQ for output swing, and VPP for program and erase operation. The GT28F008B3T90 provides program/erase capability at 2.7 V or 12 V (for fast production programming) and read with VCC at 2.7 V. Since many designs read from the flash memory a large percentage of the time, 2.7 V VCC operation can provide substantial power savings.
Parametrics
GT28F008B3T90 absolute maximum ratings: (1)Extended Operating Temperature During Read: -40℃ to +85℃; (2)During Block Erase and Program: -40℃ to +85℃; (3)Temperature under Bias: -40℃ to +85℃; (4)Storage Temperature: -65℃ to +125℃; (5)Voltage On Any Pin (except VCC, VCCQ and VPP) with Respect to GND: -0.5 V to +3.7 V; (6)VPP Voltage (for Block Erase and Program) with Respect to GND: -0.5 V to +13.5 V; (7)VCC and VCCQ Supply Voltage with Respect to GND: -0.2 V to +3.7 V; (8)Output Short Circuit Current: 100 mA.
Features
GT28F008B3T90 features: (1)Enhanced blocking for easy segmentation of code and data or additional design flexibility; (2)Program Suspend to Read command; (3)VCCQ input of 1.65 V?.5 V on all I/Os. See Figures 1 through 4 for pinout diagrams and VCCQ location; (4)Maximum program and erase time specification for improved data storage.
Diagrams
![]() GT28F320B3TA100SB93 |
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![]() IC FLASH 32MBIT 100NS 47MBGA |
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![]() GT28F320B3TA110 |
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![]() IC FLASH 32MBIT 110NS 47MBGA |
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![]() GT28F320C3BA100 |
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![]() IC FLASH 32MBIT 100NS 47MBGA |
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![]() GT28F320C3BA100SB93 |
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![]() IC FLASH 32MBIT 100NS 47MBGA |
![]() Data Sheet |
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![]() GT28F320C3BA110 |
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![]() IC FLASH 32MBIT 110NS 47MBGA |
![]() Data Sheet |
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![]() GT28F320C3TA100SB93 |
![]() |
![]() IC FLASH 32MBIT 100NS 47MBGA |
![]() Data Sheet |
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