Product Summary

The IRG4BC30FD is an insulated gate bipolar transistor with ultrafast soft recovery diode.

Parametrics

IRG4BC30FD absolute maximum ratings: (1)collector-to-emitter voltage: 600 V; (2)continuous collector current: 31 A; (3)pulsed collector current: 124 A; (4)clamped inductive load current: 124 A; (5)diode continuous forward current: 12 A; (6)diode maximum forward current: 120 A; (7)gate-to-emitter voltage: ±20 V; (8)maximum power dissipation: 100 W; (9)operating junction and storage temperature range: -55 to +150 ℃.

Features

IRG4BC30FD features: (1)Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode); (2)Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3; (3)IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations; (4)Industry standard TO-220AB package; (5)Lead-Free.

Diagrams

IRG4BC30FD pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRG4BC30FD
IRG4BC30FD
International Rectifier
IGBT W/DIODE 600V 31A TO-220AB
Data Sheet
1-200: $1.56
IRG4BC30FD1
IRG4BC30FD1

IGBT W/DIODE 600V 31A TO-220AB
Data Sheet
0-100: $2.52
IRG4BC30FD1PBF
IRG4BC30FD1PBF
International Rectifier
IGBT Transistors 600V Fast 1-5kHz >20kHz resonant mode
Data Sheet
0-1: $1.97
1-25: $1.34
25-100: $1.00
100-250: $0.96
IRG4BC30FDPBF
IRG4BC30FDPBF
International Rectifier
IGBT Transistors 600V Fast 1-8kHz
Data Sheet
0-1: $2.21
1-25: $1.51
25-100: $1.12
100-250: $1.07
IRG4BC30FD-SPBF
IRG4BC30FD-SPBF
International Rectifier
IGBT Transistors
Data Sheet
0-720: $1.05
720-1000: $1.00
IRG4BC30FD-S
IRG4BC30FD-S

IGBT W/DIODE 600V 31A D2PAK
Data Sheet
0-200: $1.40
IRG4BC30FDSTRRP
IRG4BC30FDSTRRP
International Rectifier
IGBT Modules 600V 31A
Data Sheet
0-1: $2.24
1-25: $1.53
25-100: $1.14
100-250: $1.09
IRG4BC30FD-STRR
IRG4BC30FD-STRR

DIODE IGBT 600V 31A COPAK D2PAK
Data Sheet
Negotiable