Product Summary

The AH312G is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrowbandtuned application circuits with up to +49 dBm OIP3 and +33 dBm of compressed 1dB power. The AH312G is housed in a leadfree/ green/RoHS-compliant SOIC-8 package. All devices are 100% RF and DC tested. The AH312G is targeted for use as a driver amplifier in wireless infrastructure where high linearity and medium power is required. An internal active bias allows the AH312G to maintain high linearity over temperature and operate directly off a single +5V supply. This combination makes the device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G base stations. Applications are (1)Final stage amplifiers for repeaters; (2)Mobile infrastructure.

Parametrics

AH312G absolute maximum ratings: (1)Operating case temperature: -40 to +85 °C; (2)Storage temperature: -65 to +150 °C; (3)RF input power (continuous): +28 dBm; (4)Device voltage: +8 V; (5)Device current: 1400 mA; (6)Device power: 8 W; (7)Junction temperature: +250 °C.

Features

AH312G features: (1)400 – 2300 MHz; (2)+33 dBm P1dB; (3)+51 dBm Output IP3; (4)18 dB Gain @ 900 MHz; (5)+5V Single Positive Supply; (6)MTTF > 100 Years; (7)Lead-free/green/RoHS-compliant SOIC-8 SMT Pkg.

Diagrams

AH312G pin connection