(Hong Kong)
Product Summary
The ap4511gm is an N AND P-channel enhancement mode power MOSFET. The Advanced Power MOSFET from APEC provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Parametrics
ap4511gm absolute maximum ratings: (1)VDS, Drain-Source Voltage: 35 V; (2)VGS, Gate-Source Voltage: ±20 V; (3)ID@TC=25℃, Continuous Drain Current: 7A; (4)ID@TC=100℃, Continuous Drain Current: 5.7 A; (5)IDM, Pulsed Drain Current: 30A; (6)PD@TC=25℃, Total Power Dissipation: 2.0 W; (7)Linear Derating Factor: 0.016 W/℃; (8)TSTG, Storage Temperature Range: -55 to 150 ℃; (9)TJ, Operating Junction Temperature Range: -55 to 150 ℃.
Features
ap4511gm features: (1)Simple Drive Requirement; (2)Low On-resistance RDS(ON); (3)Fast Switching Performance.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 AP4511GM |
Other |
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Data Sheet |
Negotiable |
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