(Hong Kong)
Product Summary
The BLF145 is a silicon N-channel enhancement mode vertical D-MOS transistor. The BLF145 is designed for SSB transmitter applications in the HF frequency range. The BLF145 is encapsulated in a 4-lead, SOT123A flange package, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (VGS) groups are available on request.
Parametrics
BLF145 absolute maximum ratings: (1)Drain-source voltage:65V; (2)Gate-source voltage:±20V; (3)Drain current (DC):6A; (4)Total power dissipation Tmb≤25℃:68W; (5)Storage temperature:-65℃ to 150℃; (6)Junction temperature:200℃.
Features
BLF145 features: (1)High power gain; (2)Low noise figure; (3)Good thermal stability; (4)Withstands full load mismatch.
Diagrams
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 BLF145 |
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Negotiable |
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BLF145,112 |
NXP Semiconductors |
Transistors RF MOSFET Power RF DMOS 30W HF |
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