Product Summary
The bux39 is a high current, high speed, high power transistor.
Parametrics
bux39 absolute maximum ratings: (1)VCEO Collector-Emitter Voltage: 90 V; (2)VCBO Collector-Base Voltage: 120 V; (3)VEBO Emitter-Base Voltage: 7 V; (4)VCEX Collector-Emitter Voltage: 120 V; (5)IC Collector Current: 30 A; (6)ICM Collector Peak Current: 40 A; (7)IB Base Current: 6 A; (8)Pt Total Power Dissipation: 120 Watts; (9)TJ Junction Temperature: 200 °C; (10)TStg Storage Temperature: -65 to +200 °C .
Features
bux39 features: (1)VCEO(SUS)Collector-Emitter Sustaining Voltage (*): 90 V; (2)VEB0 Emitter-Base Voltage IC=0A , IE=50 mA: 7 V; (3)ICEO Collector Cutoff Current: 1 mA; (4)VBE(SAT)Base-Emitter saturation Voltage (*): 2.1 to 2.5 V; (5)IS/B Second breakdown collector current: 4 A; (6)fT Transition frequency: 8 MHz; (7)ton Turn-on time: 0.8 to 1.2 μs.
Diagrams
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![]() BUX39 |
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![]() BUX32A |
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![]() BUX32B |
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![]() BUX37 |
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![]() BUX39 |
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