(Hong Kong)
Product Summary
The dim400whs12-a is a half bridge 1200V, n-channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10us short circuit withstand. The dim400whs12-a incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. The applications of the dim400whs12-a are (1)High Power Inverters; (2)Motor Drives; (3)UPS Systems.
Parametrics
dim400whs12-a absolute maximum ratings: (1)VCES, Collector-emitter voltage: 1200V; (2)VGES, Gate-emitter voltage: ±20V; (3)IC, Continuous collector current: 400A; (4)IC(PK), Peak collector current: 800A; (5)Pmax, Max. transistor power dissipation: 2780W; (6)I2t, Diode I2t value: 25kA2S; (7)Visol, Isolation voltage – per module: 2500V.
Features
dim400whs12-a features: (1)Non Punch Through Silicon; (2)Isolated Copper Baseplate; (3)10s Short Circuit Withstand; (4)Lead Free construction.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 DIM400WHS12-A |
Other |
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Data Sheet |
Negotiable |
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DIM400NSM33-F000 |
Other |
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Data Sheet |
Negotiable |
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DIM400PBM17-A |
Other |
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Data Sheet |
Negotiable |
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DIM400PHM17-A |
Other |
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Data Sheet |
Negotiable |
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DIM400WHS12-A |
Other |
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Data Sheet |
Negotiable |
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DIM400WHS17-A |
Other |
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Data Sheet |
Negotiable |
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DIM400WKS12-A |
Other |
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Data Sheet |
Negotiable |
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