(Hong Kong)
Product Summary
The DU1215S is a RF power MOSFET transistor.
Parametrics
DU1215S absolute maximum ratings: (1)Drain-source voltage: 40 V; (2)Gate-source voltage: 20 V; (3)Drain-source current: 4 A; (4)Power dissipation: 87.5 W; (5)Junction temperature: 200 °C; (6)Storage temperature: -55 to +150 °C; (7)Thermal resistance: 2 °C/W.
Features
DU1215S features: (1)N-Channel enhancement mode device; (2)DMOS structure; (3)Lower capacitances for broadband operation; (4)High saturated output power; (5)Lower noise figure than bipolar devices; (6)Specifically designed for 12 volt applications.
Diagrams
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 DU1215S |
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Data Sheet |
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| Image | Part No | Mfg | Description | |
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DU1215S |
Other |
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Data Sheet |
Negotiable |
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DU1260T |
Other |
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Data Sheet |
Negotiable |
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