(Hong Kong)
Product Summary
The DU1230S is a RF power MOSFET transistor.
Parametrics
DU1230S absolute maximum ratings: (1)Drain-source voltage: 40 V; (2)Gate-source voltage: 20 V; (3)Drain-source current: 8 A; (4)Power dissipation: 175 W; (5)Junction temperature: 200 °C; (6)Storage temperature: -55 to +150 °C; (7)Thermal resistance: 1 °C/W.
Features
DU1230S features: (1)N-Channel enhancement mode device; (2)DMOS structure; (3)Lower capacitances for broadband operation; (4)High saturated output power; (5)Lower noise figure than bipolar devices; (6)Specifically designed for 12 volt applications.
Diagrams
