Product Summary

The fch041n60f is a 600V N-channel MOSFET. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET II is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Parametrics

fch041n60f absolute maximum ratings: (1)Drain to Source Voltage: 600 V; (2)Gate to Source Voltage: ±20V; (3)Drain Current-Continuous (TC = 25°C): 76A; (4)Drain Current - Pulsed: 228 A; (5)Single Pulsed Avalanche Energy: 2025 mJ; (6)Avalanche Current: 15 A; (7)Power Dissipation: 595 W; (8)Operating and Storage Temperature Range: -55 to +150°C; (9)Maximum Lead Temperature for Soldering Purpose: 300°C.

Features

fch041n60f features: (1)RDS(on)= 36mΩ (Typ); (2)Ultra low gate charge (Typ. Qg=277nC); (3)Low effective output capacitance; (4)100% avalanche tested; (5)RoHS Compliant.

Diagrams

fch041n60f pinout diagram