(Hong Kong)
Product Summary
The fch76n60nf is an N-Channel SupreMOS FRFET MOSFET. This advanced technology and precise process control provide lowest Rsp on-resistance, superior switching performance and ruggedness. The fch76n60nf is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SupreMOS FRFET MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
Parametrics
fch76n60nf absolute maximum ratings: (1)VDSS Drain to Source Voltage: 600 V; (2)VGSS Gate to Source Voltage: ±30 V; (3)ID Drain Current: Continuous (TC = 25℃) 72.8 A, Continuous (TC = 100℃) 46A; (4)IDM Drain Current: Pulsed 218 A; (5)EAS Single Pulsed Avalanche Energy: 7381 mJ; (6)IAR Avalanche Current: 24.3 A; (7)EAR Repetitive Avalanche Energy: 5.43 mJ; (8)dv/dt MOSFET dv/dt Ruggedness: 100 V/ns; (9)Peak Diode Recovery dv/dt: 50 V/ns; (10)PD Power Dissipation: (TC = 25℃) 543 W, Derate above 25℃ 4.34 W/℃; (11)TJ, TSTG Operating and Storage Temperature Range: -55 to +150℃; (12)TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds: 300℃; (13)RθJC Thermal Resistance, Junction to Case: 0.23℃/W; (14)RθCS Thermal Resistance, Case to Heat Sink (Typical): 0.24℃/W; (15)RθJA Thermal Resistance, Junction to Ambient: 40℃/W.
Features
fch76n60nf features: (1)RDS(on) = 28.7 mΩ(Typ.)@ VGS = 10 V, ID = 38 A; (2)Ultra Low Gate Charge (Typ.Qg = 230 nC); (3)Low Effective Output Capacitance (Typ. Coss.eff = 896 pF); (4)100% Avalanche Tested; (5)RoHS Compliant.
Diagrams
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 FCH76N60NF |
Fairchild Semiconductor |
MOSFET 600V N-Chan MOSFET FRFET, SupreMOS |
Data Sheet |
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FCH76N60N |
Fairchild Semiconductor |
MOSFET 600V N-Chan MOSFET SupreMOS |
Data Sheet |
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FCH76N60NF |
Fairchild Semiconductor |
MOSFET 600V N-Chan MOSFET FRFET, SupreMOS |
Data Sheet |
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