Product Summary
The fds2672 is an N-Channel Ultra FET Trench MOSEFT. The fds2672 is produced using Fairchild Semiconductor’s advanced Ultra FET Trench process that has been especially tailo red to minimize the on-state resistance and yet maintain superior switching performance. The application of the fds2672 includes DC-DC conversion.
Parametrics
fds2672 absolute maximum ratings: (1)VDC, Drain to source voltage: 200 V; (2)VCS, Gate to source voltage: ±20 V; (3)ID, Drain current-continuous: 3.9 A; (4)EAS, Single pulse avalanche energy: 37.5 mJ; (5)PD, Power dissipation: 2.5 W; (6)TJ,TSTG, Operating and storage temperature: -55 to 150 ℃.
Features
fds2672 features: (1)Max rDS (on) = 70 mΩ at VCS = 10 V, ID = 39 A; (2)Max rDS (on) = 80 mΩ at VCS = 6 V, ID = 35 A; (3)Fast switching speed; (4)High performance trench technology for extremely low cds (on); (5)ROHS compliant.
Diagrams
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![]() FDS2672 |
![]() Fairchild Semiconductor |
![]() MOSFET 200V 3.9A 70OHM NCH ULTRAFET |
![]() Data Sheet |
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![]() FDS2672_F085 |
![]() Fairchild Semiconductor |
![]() MOSFET 200V3.9A 70OHMNCH ULTRAFET TRENCH |
![]() Data Sheet |
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