Product Summary
The fll120 is a 120 Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers. This new product is uniquely suited for use in PCS/PCN base station amplifiers as it offers high gain, long term reliability and ease of use.
Parametrics
fll120 absolute maximum ratings: (1)Drain-Source Voltage VDS: 15 V; (2)Gate-Source Voltage VGS: -5 V; (3)Total Power Dissipation PT: 187.5 W; (4)Storage Temperature Tstg: -65 to 175°C; (5)Channel Temperature Tch: 175 °C.
Features
fll120 features: (1)Push-Pull Configuration; (2)High Power Output: 120W (Typ.); (3)High PAE: 44%.; (4)Broad Frequency Range: 1800 to 2000 MHz.; (5)Suitable for class AB operation..
Diagrams
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![]() FLL1200IU-2 |
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![]() FLL1200IU-3 |
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