(Hong Kong)
Product Summary
The fp50r12kt4 is an IGBT-Module.
Parametrics
fp50r12kt4 absolute maximum ratings: (1)Collector-emitter voltage Tvj = 25℃ VCES: 1200 V; (2)Continuous DC collector current TC = 95℃, Tvj = 175℃ ICnom: 50 A; (3)Repetitive peak collector current tP = 1 ms ICRM: 100 A; (4)Total power dissipation TC = 25℃, Tvj = 175℃ Ptot: 280 W; (5)Gate-emitter peak voltage VGES: +/-20 V.
Features
fp50r12kt4 features: (1)Gate threshold voltage IC = 1,70 mA, VCE = VGE, Tvj = 25℃ VGEth: 5.2 to 6.4 V; (2)Gate charge VGE = -15 V to +15 V QG: 0,38 μC; (3)Internal gate resistor Tvj = 25℃ RGint: 4.0 Ω; (4)Input capacitance f = 1 MHz, Tvj = 25℃, VCE = 25 V, VGE = 0 V Cies: 2.80 nF; (5)Reverse transfer capacitance f = 1 MHz, Tvj = 25℃, VCE = 25 V, VGE = 0 V Cres: 0.10 nF; (6)Collector-emitter cut-off current VCE = 1200 V, VGE = 0 V, Tvj = 25℃ ICES: 1.0 mA; (7)Gate-emitter leakage current VCE = 0 V, VGE = 20 V, Tvj = 25℃ IGES: 100 nA.
Diagrams
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 FP50R12KT4 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 50A |
Data Sheet |
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FP50R12KT4_B11 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 50A |
Data Sheet |
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