(Hong Kong)
Product Summary
The hat2164h-el-e is a silicon N channel power MOS FET power switching.
Parametrics
hat2164h-el-e absolute maximum ratings: (1)drain to source voltage: 30V; (2)gate to source voltage: ±20V; (3)drain current: 60A; (4)drain peak current: 240A; (5)avalanche current: 30A; (6)avalanche energy: 90mj; (7)channel dissipation: 30W; (8)channel temperature: 150°C; (9)storage temperature: -55 to 150°C.
Features
hat2164h-el-e features: (1)capable of 4.5V gate drive; (2)low drive current; (3)high density mounting; (4)low on-resistance.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 HAT2164H-EL-E |
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MOSFET N-CH 30V 60A 5LFPAK |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||
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HAT2016R |
Other |
|
Data Sheet |
Negotiable |
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HAT2019R |
Other |
|
Data Sheet |
Negotiable |
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HAT2020R |
Other |
|
Data Sheet |
Negotiable |
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HAT2022R |
Other |
|
Data Sheet |
Negotiable |
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HAT2024R |
Other |
|
Data Sheet |
Negotiable |
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HAT2025R |
Other |
|
Data Sheet |
Negotiable |
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