Product Summary

The huf75343g3 is an N-Channel UltraFET Power MOSFET. The huf75343g3 is manufactured using the innovative UltraFET process. This advanced process technology of the huf75343g3 achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device of the huf75343g3 is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. The huf75343g3 was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery operated products.

Parametrics

huf75343g3 absolute maximum ratings: (1)Drain to Source Voltage (Note 1), VDSS: 55 V; (2)Drain to Gate Voltage (RGS = 20kΩ) (Note 1), VDGR: 55 V; (3)Gate to Source Voltage, VGS: ± 20 V; (4)Drain Current Continuous (Figure 2), ID: 75 A; (5)Pulsed Drain Current, IDM: Figure 4; (6)Pulsed Avalanche Rating, EAS: Figure 6; (7)Power Dissipation, PD: 270 W; (8)Derate Above 25 ℃: 1.81 W/℃; (9)Operating and Storage Temperature, TJ, TSTG: -55 to 175 ℃; (10)Leads at 0.063in (1.6mm) from Case for 10s, TL: 300 ℃; (11)Package Body for 10s, See Techbrief 334, Tpkg: 260 ℃.

Features

huf75343g3 features: (1)75A, 55V; (2)Simulation Models Temperature Compensating PSPICE and SABER Models; (3)Peak Current vs Pulse Width Curve; (4)UIS Rating Curve; (5)Related Literature.

Diagrams

huf75343g3 block diagram

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