Product Summary
The irf520npbf is a Power MOSFET. The irf520npbf provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package of the irf520npbf is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.
Parametrics
irf520npbf absolute maximum ratings: (1)Continuous Drain Current, VGS @ 10V: 9.7 A; (2)ID @ TC = 100 ℃ Continuous Drain Current, VGS @ 10V: 6.8 A; (3)IDM, Pulsed Drain Current: 38 A; (4)PD @TC = 25 ℃ Power Dissipation: 48 W; (5)Linear Derating Factor: 0.32 W/℃; (6)VGS, Gate-to-Source Voltage: ±20 V; (7)EAS, Single Pulse Avalanche Energy: 91 mJ; (8)IAR, Avalanche Current: 5.7 A; (9)EAR, Repetitive Avalanche Energy: 4.8 mJ; (10)dv/dt Peak Diode Recovery dv/dt: 5.0 V/ns; (11)TJ, TSTG, Operating Junction and Storage Temperature Range: -55 to + 175 ℃; (12)Soldering Temperature, for 10 seconds: 300 ℃; (13)Mounting torque, 6-32 or M3 srew: 10 lbfin (1.1Nm).
Features
irf520npbf features: (1)Advanced Process Technology; (2)Dynamic dv/dt Rating; (3)175 ℃ Operating Temperature; (4)Fast Switching; (5)Fully Avalanche Rated; (6)Lead-Free.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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IRF520NPBF |
International Rectifier |
MOSFET MOSFT 100V 9.7A 200mOhm 16.7nC |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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Other |
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Data Sheet |
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Data Sheet |
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IRF510A_Q |
Fairchild Semiconductor |
MOSFET 100V .2 Ohm 33W |
Data Sheet |
Negotiable |
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