Product Summary

The irfb31n20dpbf is a HEXFET Power MOSFET. The applications of the irfb31n20dpbf include High Frequency DC-DC converters, Lead-Free.

Parametrics

irfb31n20dpbf absolute maximum ratings: (1)ID, @ TC = 25 ℃ Continuous Drain Current, VGS @ 10V: 31 A; (2)ID, @ TC = 100 ℃ Continuous Drain Current, VGS @ 10V: 21 A; (3)IDM, Pulsed Drain Current: 124 A; (4)PD, @TA = 25 ℃ Power Dissipation: 3.1 W; (5)PD, @TC = 25 ℃ Power Dissipation: 200 W; (6)Linear Derating Factor: 1.3 W/℃; (7)VGS, Gate-to-Source Voltage: ±30 V; (8)dv/dt, Peak Diode Recovery dv/dt: 2.1 V/ns; (9)TJ, Operating Junction and: -55 to +175 ℃; (10)TSTG, Storage Temperature Range: -55 to +175 ℃; (11)Soldering Temperature, for 10 seconds: 300 ℃; (12)Mounting torqe, 6-32 or M3 screw: 10 lbfin.

Features

irfb31n20dpbf features: (1)Low Gate to Drain to Reduce Switching Losses; (2)Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See AN 1001); (3)Fully Characterized Avalanche Voltage and Current.

Diagrams

irfb31n20dpbf block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRFB31N20DPBF
IRFB31N20DPBF
International Rectifier
MOSFET MOSFT 200V 31A 82mOhm 70nC
Data Sheet
0-1: $2.75
1-25: $1.88
25-100: $1.39
100-250: $1.33
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRFB11N50A
IRFB11N50A
Vishay/Siliconix
MOSFET N-Chan 500V 11 Amp
Data Sheet
0-725: $1.93
725-1000: $1.85
1000-2000: $1.81
IRFB11N50APBF
IRFB11N50APBF
Vishay/Siliconix
MOSFET N-Chan 500V 11 Amp
Data Sheet
0-1: $1.07
1-10: $0.86
10-100: $0.77
100-250: $0.69
IRFB13N50A
IRFB13N50A
Vishay/Siliconix
MOSFET N-Chan 500V 14 Amp
Data Sheet
0-725: $2.48
725-1000: $2.38
1000-2000: $2.32
IRFB13N50APBF
IRFB13N50APBF
Vishay/Siliconix
MOSFET N-Chan 500V 14 Amp
Data Sheet
0-1: $2.11
1-10: $1.69
10-100: $1.54
100-250: $1.39
IRFB16N50K
IRFB16N50K
Vishay/Siliconix
MOSFET N-Chan 500V 17 Amp
Data Sheet
Negotiable 
IRFB16N50KPBF
IRFB16N50KPBF
Vishay/Siliconix
MOSFET N-Chan 500V 17 Amp
Data Sheet
Negotiable