(Hong Kong)
Product Summary
The irfp150n is a hexfet power mosfet. The irfp150n utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the irfp150nis well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package of the irfp150n is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices.
Parametrics
irfp150n absolute maximum ratings: (1) Continuous Drain Current, VGS@10V, ID@Tc=25°C: 42A; (2) CContinuous Drain Current, VGS@10V, ID@Tc=100°C: 30A; (3) Pulsed Drain Current IDM: 140A; (4) Power Dissipation, PD@Tc=25°C: 160W; (5) Linear Derating Factor: 1.1W/°C; (6) Gate-to-Source Voltage VGS: ±20V; (7) Single Pulse Avalanche Energy EAS: 420mJ; (8) Avalanche Current IAR: 22A; (9) Repetitive Avalanche Energy EAR: 16mJ; (10) Peak Diode Recovery dv/dt: 5V/ns; (11) Operating Junction and Storage Temperature Range TJ, TSTG: -55 to +175°C; (12) Soldering Temperature, for 10 seconds: 300°C (1.6mm from case) .
Features
irfp150n features: (1) Advanced Process Technology; (2) Dynamic dv/dt Rating; (3) 175°C Operating Temperature; (4) Fast Switching; (5) Fully Avalanche Rated.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 IRFP150N |
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MOSFET N-CH 100V 42A TO-247AC |
Data Sheet |
Negotiable |
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IRFP150N_R4942 |
Fairchild Semiconductor |
MOSFET |
Data Sheet |
Negotiable |
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IRFP150NPBF |
International Rectifier |
MOSFET MOSFT 100V 39A 36mOhm 73.3nCAC |
Data Sheet |
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