IRLZ44NS

fifth generation HEXFET, 160A, 110W, ±16V, TO-262

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Price:: US $2.20~2.50 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 100 :	2.50 / Piece
101 ~ 800 :	2.40 / Piece
801 ~ 1600 :	2.20 / Piece

PartNumber:: IRLZ44NS

Brand:: International Rectifier - IR | Pack: | D/C:

Availability:: Supply Ability: 8000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-06-23

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Part Number:IRLZ44NS
US $2.20 - 2.50
Quantity:

piece

Product Summary

The irlz44ns is a fifth generation HEXFET from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of the irlz44ns, combined with the fast switching speed and ruggedized device design that the irlz44ns is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The irlz44ns provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The through-hole version of the irlz44ns is available for low-profile applications.

Parametrics

irlz44ns absolute maximum ratings: (1) Continuous Drain Current, VGS@10V, ID@Tc=25°C: 47A; (2) Continuous Drain Current, ID@Tc=100°C: 33A; (3) Pulsed Drain Current IDM: 160A; (4) Power Dissipation PD@TA=25°C: 3.8W, PD@TC=25°C: 110W; (5) Gate-to-Source Voltage VGS: ±16V; (6) Avalanche Current IAR: 25A; (7) Repetitive Avalanche Energy EAR: 18mJ; (8) Peak Diode Recovery dv/dt, dv/dt: 5V/ns; (9) Operating Junction and Storage Temperature Range Tj, Tstg: -55 to +175°C

Features

irlz44ns features: (1) Continuous Drain Current, VGS@10V, ID@Tc=25°C: 47A; (2) Continuous Drain Current, ID@Tc=100°C: 33A; (3) Pulsed Drain Current IDM: 160A; (4) Power Dissipation PD@TA=25°C: 3.8W, PD@TC=25°C: 110W; (5) Gate-to-Source Voltage VGS: ±16V; (6) Avalanche Current IAR: 25A; (7) Repetitive Avalanche Energy EAR: 18mJ; (8) Peak Diode Recovery dv/dt, dv/dt: 5V/ns; (9) Operating Junction and Storage Temperature Range Tj, Tstg: -55 to +175°C.