(Hong Kong)
Product Summary
The ixgr32n60cd1 is a hiperfast igbt with Diode ISOPLUS247. It is ideal for: (1)Easy assembly; (2)High power density; (3)Very fast switching speeds for high frequency applications.
Parametrics
ixgr32n60cd1 absolute maximum ratings: (1)VCES T J = 25°C to 150°C: 600 V; (2)VGES Continuous: ±20 V; (3)IC25 TC = 25°C: 45 A; (4)PC TC = 25°C: 140 W; (5)T J: -55 to +150 °C; (6)Weight: 5 g.
Features
ixgr32n60cd1 features: (1)DCB Isolated mounting tab; (2)Meets TO-247AD package Outline; (3)High current handling capability; (4)Latest generation HDMOSTM process; (5)MOS Gate turn-on - drive simplicity.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 IXGR32N60CD1 |
Ixys |
IGBT Transistors DISCRETE IGBT 600V 45 AMP |
Data Sheet |
Negotiable |
|
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
IXGR120N60B |
Ixys |
IGBT Transistors 76 Amps 600V 2.1 Rds |
Data Sheet |
Negotiable |
|
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 |
IXGR120N60C2 |
Ixys |
IGBT Transistors 60 Amps 600V 2.7 V Rds |
Data Sheet |
Negotiable |
|
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|
IXGR12N60C |
Ixys |
IGBT Transistors 15 Amps 600V 2.7 Rds |
Data Sheet |
Negotiable |
|
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|
IXGR16N170AH1 |
Ixys |
IGBT Transistors 8 Amps 1700V 5.2 Rds |
Data Sheet |
Negotiable |
|
||||
|
IXGR24N120C3D1 |
Ixys |
IGBT Transistors 48 Amps 1200V 2.75 Rds |
Data Sheet |
Negotiable |
|
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|
IXGR24N120C3H1 |
Ixys |
IGBT Transistors 48 Amps 1200V |
Data Sheet |
Negotiable |
|
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