Product Summary

The kf13n60 is an n-channel mos field effect transistor. The kf13n60 has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. The kf13n60 is mainly suitable for switching mode power supplies.

Parametrics

kf13n60 absolute maximum ratings: (1)Drain-Source Voltage, VDSS: 600 V; (2)Gate-Source Voltage, VGSS: ±30 V; (3)Drain Current Pulsed, IDP: 32 A; (4)Single Pulsed Avalanche Energy, EAS: 870 mJ; (5)Repetitive Avalanche Energy, EAR: 22.5 mJ; (6)Peak Diode Recovery dv/dt, dv/dt: 4.5 V/ns; (7)Drain Power Dissipation, PD: 215 W; (8)Maximum Junction Temperature, Tj: 150 ℃; (9)Storage Temperature Range, Tstg: -55 to 150 ℃; (10)Thermal Resistance, Junction-to-Case, RthJC: 0.58 ℃/W; (11)Thermal Resistance, Junction-to-Ambient, RthJA: 40 ℃/W.

Features

kf13n60 features: (1)VDSS(Min.)= 600V, ID= 13A; (2)Drain-Source ON Resistance: RDS(ON)=0.56(Max.) @VGS =10V; (3)Qg(typ.) =36nC.

Diagrams

kf13n60 block diagram