Product Summary
The m29dw128f60za6 is a 128 Mbit (16Mb × 8 or 8Mb × 16) nonvolatile memory that can be read, erased and reprogrammed. These operations of the m29dw128f60za6 can be performed using a single low voltage (2.7 to 3.6V) supply. The VCCQ is an additional voltage supply that allows to drive the I/O pins down to 1.65V. At Power-up the memory defaults to the m29dw128f60za6’s Read mode.
Parametrics
m29dw128f60za6 absolute maximum ratings: (1)TBIAS, Temperature Under Bias: –50 to 125 ℃; (2)TSTG, Storage Temperature: –65 to 150 ℃; (3)VIO, Input or Output Voltage: –0.6 to VCC +0.6 V; (4)VCC, Supply Voltage: –0.6 to 4 V; (5)VCCQ, Input/Output Supply Voltage: –0.6 to 4 V; (6)VID, Identification Voltage: –0.6 to 13.5 V; (7)VPP, Program Voltage: –0.6 to 13.5 V.
Features
m29dw128f60za6 features: (1)Supply Voltage VCC = 2.7V to 3.6V for Program, Erase and Read; (2)Asynchronous random/page read; (3)Programming time; (4)Erase verify ; (5)Memory blocks; (6)Dual operations; (7)Program/ erase suspend and resume modes; (8)Unlock bypass program; (9)Common flash interface; (10)100,000 Program/erase cycles per block; (11)Low power consumption; (12)Hardware block protection; (13)Security features; (14)Extended memory block; (15)Electronic signature; (16)Ecopack packages available.
Diagrams
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![]() M29DW128F60ZA6E |
![]() STMicroelectronics |
![]() Flash STD FLASH 128 MEG |
![]() Data Sheet |
![]() Negotiable |
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![]() M29DW128F |
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![]() M29DW128F60NF6E |
![]() STMicroelectronics |
![]() Flash 128 Mbit |
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![]() M29DW128F60ZA6E |
![]() STMicroelectronics |
![]() Flash STD FLASH 128 MEG |
![]() Data Sheet |
![]() Negotiable |
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![]() M29DW128F70NF6E |
![]() STMicroelectronics |
![]() Flash STD FLASH 128 MEG |
![]() Data Sheet |
![]() Negotiable |
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![]() M29DW128F70ZA6F |
![]() STMicroelectronics |
![]() Flash STD FLASH 128 MEG |
![]() Data Sheet |
![]() Negotiable |
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![]() M29DW128G |
![]() Other |
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