Product Summary

The mjl21193 is a Silicon Power Transistor. The mjl21193 utilizes Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.

Parametrics

mjl21193 absolute maximum ratings: (1)Collector-Emitter Voltage, VCEO: 250 Vdc; (2)Collector-Base Voltage, VCBO: 400 Vdc; (3)Emitter-Base Voltage, VEBO: 5 Vdc; (4)Collector-Emitter Voltage-1.5 V, VCEX: 400 Vdc; (5)Collector Current-Continuous Peak, IC: 16 Adc; (6)Base Current-Continuous, IB: 5 Adc; (7)Total Power Dissipation @ TC = 25 ℃, PD: 200 W; (8)Operating and Storage Junction Temperature Range, TJ, Tstg: -65 to +150 ℃.

Features

mjl21193 features: (1)Total Harmonic Distortion Characterized; (2)High DC Current Gain- hFE = 25 Min @ IC = 8 Adc; (3)Excellent Gain Linearity; (4)High SOA: 2.25 A, 80 V, 1 Second; (5)Pb-Free Packages are Available.

Diagrams

mjl21193 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MJL21193
MJL21193

ON Semiconductor

Transistors Bipolar (BJT) 16A 250V 200W PNP

Data Sheet

Negotiable 
MJL21193G
MJL21193G

ON Semiconductor

Transistors Bipolar (BJT) 16A 250V 200W PNP

Data Sheet

0-1: $2.70
1-25: $2.24
25-100: $1.89
100-500: $1.63