MMBR4957LT1

MMBR4957LT1, PNP silicon high-frequency transistor, 30 Vdc, 30 mAdc, 0.278 W, SOT

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Price:: US $2.30~2.50 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 100 :	2.50 / Piece
101 ~ 500 :	2.40 / Piece
501 ~ 1000 :	2.30 / Piece

PartNumber:: MMBR4957LT1

Brand:: ON SEMICONDUCTOR - ONS | Pack: | D/C:

Availability:: Supply Ability: 8000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-08-18

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Part Number:MMBR4957LT1
US $2.30 - 2.50
Quantity:

piece

Product Summary

The MMBR4957LT1 is a PNP silicon high-frequency transistor. The MMBR4957LT1 designed for high–gain, low–noise amplifier oscillator and mixer applications. Specifically packaged for thick and thin–film circuits using surface mount components.

Parametrics

MMBR4957LT1 absolute maximum ratings: (1)Collector–emitter voltage, VCEO: –30 Vdc; (2)Collector–base voltage, VCBO: –30 Vdc; (3)Emitter–base voltage, VEBO: –3.0 Vdc; (4)Collector current — continuous, IC: –30 mAdc; (5)Maximum junction temperature, TJmax: 150 °C; (6)Power dissipation, Tcase = 75°C, PD(max): 0.278 W; (7)Derate linearly above, Tcase = 75°C @, PD(max): 3.70 mW/°C; (8)Storage temperature, Tstg: –55 to +150 °C; (9)Thermal resistance junction to case, RqJC: 270 °C/W.

Features

MMBR4957LT1 features: (1)High gain — gpe = 17 dB typ @ f = 450 MHz; (2)Low noise — NF = 3.0 dB typ @ f = 450 MHz; (3)Available in tape and reel packaging options by adding suffix: T1 suffix = 3,000 units per reel; T3 suffix = 10,000 units per reel.