Product Summary
The mrf1550nt1 is a RF Power Field Effect Transistor. The mrf1550nt1 Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of the mrf1550nt1 make them ideal for large-signal, common source amplifier applications in 12.5 volt mobile FM equipment.
Parametrics
mrf1550nt1 absolute maximum ratings: (1)Drain-Source Voltage, VDSS: -0.5 to +40 Vdc; (2)Gate-Source Voltage, VGS: ±20 Vdc; (3)Drain Current-Continuous, ID: 12 Adc; (4)Total Device Dissipation @ TC = 25 ℃, PD: 165 W, 0.50 W/℃; (5)Storage Temperature Range, Tstg: - 65 to +150 ℃; (6)Operating Junction Temperature, TJ: 200 ℃.
Features
mrf1550nt1 features: (1)Excellent Thermal Stability; (2)Characterized with Series Equivalent Large-Signal Impedance Parameters; (3)Broadband-Full Power Across the Band: 135-175 MHz; (4)200 ℃ Capable Plastic Package; (5)N Suffix Indicates Lead-Free Terminations. RoHS Compliant; (6)In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Diagrams
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![]() Freescale Semiconductor |
![]() Transistors RF MOSFET Power LDMOS FET HI PWR TO272FN |
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![]() MRF1.6/5.6 |
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![]() MRF1.6/5.6-AP-2.5C |
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![]() MRF1.6/5.6-AP-59U |
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![]() MRF1.6/5.6-BCUPA |
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![]() MRF1.6/5.6-LPJ-179U |
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![]() RF Connectors Obsolete |
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![]() MRF1.6/5.6-LR-PC-1 |
![]() Hirose Connector |
![]() RF Connectors Obsolete |
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![]() Negotiable |
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