Product Summary
The MT9M413C36STM is a 1,280H x 1,024V (1.3 megapixel) CMOS digital image sensor capable of 500 frames-persecond (fps) operation. Its TrueSNAP electronic shutter allows simultaneous exposure of the entire pixel array. Available in color or monochrome, the MT9M413C36STM has on-chip 10-bit analog-to-digital converters (ADCs), which are self-calibrating, and a fully digital interface. The chip input clock rate is 66 MHz at approximately 500 fps, providing compatibility with many off-the-shelf interface components. The MT9M413C36STM has ten 10-bit-wide digital output ports. Its open architecture design provides access to internal operations. ADC timing and pixel-read control are integrated on-chip. At 60 fps, the MT9M413C36STM dissipates less than 150mW, and at 500 fps less than 500mW; it operates on a 3.3V supply. Pixel size is 12 microns square, and digital responsivity is 1,600 bits per lux-second.
Parametrics
MT9M413C36STM absolute maximum ratings: (1)DC supply voltage: -0.5 to 3.6 V; (2)DC input voltage: -0.5 to Vpwr + 0.5 V; (3)DC output voltage: -0.5 to Vpwr + 0.5 V; (4)DC current drain per pin (any I/O): ±50 mA; (5)DC current drain, vpwr and vgnd: ±100 mA.
Features
MT9M413C36STM features: (1)Array format: 1,280H x 1,024 V (1,310,720 pixels); (2)Pixel size and type: 12.0μm x 12.0μm trueSNAP (shuttered-node active pixel); (3)Sensor imaging area: H: 15.36mm, V: 12.29mm, diagonal: 19.67mm; (4)Frame rate: 0–500+ fps @ (1,280 x 1,024), >10,000 fps with partial scan, [e.g. 0–4000 fps @ (1,280 x 128)]; (5)Output data rate: 660 Mbs (master clock 66 MHz, ~500 fps); (6)Power consumption: < 500 mW @ 500 fps; <150 mW @ 60 fps; (7)Digital responsivity: Monochrome: 1,600 bits per lux-second @ 550nm; ADC reference @ 1V; (8)Internal intra-scene dynamic range: 59dB; (9)Supply voltage: +3.3V; (10)operating temperature: -5°c to +60°c; (11)output: 10-bit digital through 10 parallel ports; (12)conversion gain = 13μv/e-; (13)color: monochrome or color rgb; (14)shutter: truesnap freeze-frame electronic shutter; (15)shutter efficiency: >99.9%; (16)shutter exposure time: 2μs to > 33msec; (17)adc: on-chip, 10-bit column-parallel; (18)Package: 280-pin ceramic PGA.
Diagrams
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