Product Summary

The p20n60 is an IGBT in Trench and Fieldstop technology.




Parametrics

p20n60 absolute maximum ratings: (1)Collector-emitter voltage VC E: 600 V; (2)DC collector current, limited by Tjmax TC = 100°C IC: 40 A; (3)Pulsed collector current, tp limited by Tjmax IC p u l s: 60 A; (4)Turn off safe operating area: 60 A; (5)Diode forward current, limited by Tjmax TC = 100°C IF: 40 A; (6)Diode pulsed current, tp limited by Tjmax IF p u l s: 60 A; (7)Gate-emitter voltage VG E: ±20 V; (8)Short circuit withstand time 1) tS C: 5 μs; (9)Power dissipation TC = 25°C Pt o t: 166 W; (10)Operating junction temperature Tj: -40 to +175°C; (11)Storage temperature Ts t g: -55 to +175°C; (12)Soldering temperature, 1.6mm (0.063 in.)from case for 10s: 260°C.

Features

p20n60 features: (1)Very low VCE(sat)1.5 V (typ.); (2)Maximum Junction Temperature 175 °C; (3)Short circuit withstand time – 5μs; (4)Designed for : Frequency Converters; Uninterrupted Power Supply; (5)Trench and Fieldstop technology for 600 V applications offers : very tight parameter distribution; high ruggedness, temperature stable behavior; very high switching speed; low VCE(sat).; (6)Positive temperature coefficient in VCE(sat); (7)Low EMI; (8)Low Gate Charge; (9)Very soft, fast recovery anti-parallel EmCon HE diode.

Diagrams

p20n60 pin connection