Product Summary

The PHE13005 is a silicon NPN power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

Parametrics

PHE13005 absolute maximum ratings: (1)Collector to emitter voltage: 700 V; (2)Collector to emitter voltage (open base): 400 V; (3)Collector to base voltage (open emitter): 700 V; (4)Emitter-Base voltage (IB = 0): 9 V; (5)Collector current (DC): 4 A; (6)Collector current peak value: 8 A; (7)Base current (DC): 2 A; (8)Base current peak value: 4 A; (9)Total power dissipation: 75 W; (10)Storage temperature: -65 to 150 °C; (11)Junction temperature: 150 °C.

Diagrams

PHE13005 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
PHE13005
PHE13005
NXP Semiconductors
Transistors Bipolar (BJT) RAIL BIPOLAR
Data Sheet
Negotiable 
PHE13005,127
PHE13005,127
NXP Semiconductors
Transistors Bipolar (BJT) RAIL BIPOLAR
Data Sheet
0-1: $0.34
1-25: $0.30
25-100: $0.25
100-250: $0.22
PHE13005X/01,127
PHE13005X/01,127
NXP Semiconductors
Transistors Bipolar (BJT) Silicon diffused pwr transistor
Data Sheet
0-1: $0.41
1-25: $0.36
25-100: $0.31
100-250: $0.27
PHE13005X,127
PHE13005X,127
NXP Semiconductors
Transistors Bipolar (BJT) Trans GP BJT NPN 400V 4A 3-Pin(3+Tab)
Data Sheet
Negotiable