Product Summary

The ZC835BTA is a silicon varactor diode used in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise performance. Available in single or dual common cathode format in a wide rage of miniature surface mount packages. The applications of the ZC835BTA include VCXO and TCXO, Wireless communications, Pagers, Mobile radio.

Parametrics

ZC835BTA absolute maximum ratings: (1)Forward current, IF: 200 mA; (2)Power dissipation at Tamb = 25℃ SOT23, Ptot: 330 mW; (3)Power dissipation at Tamb = 25℃ SOD323, Ptot 330 mW; (4)Power dissipation at Tamb = 25℃ SOD523, Ptot: 250 mW; (5)Operating and storage temperature range: -55 to +150℃.

Features

ZC835BTA features: (1)Close tolerance C-V characteristics; (2)High tuning ratio; (3)Low IR (typically 200pA); (4)Excellent phase noise performance; (5)High Q; (6)Range of miniature surface mount packages.

Diagrams

ZC835BTA circuit diagram

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