(Hong Kong)
Product Summary
The ptb20111 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 860 to 900 MHz. Rated at 85 watts minimum output power, the ptb20111 may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.
Parametrics
ptb20111 absolute maximum ratings: (1)Collector-Emitter Voltage VCER: 40 Vdc; (2)Collector-Base Voltage VCBO: 65 Vdc; (3)Emitter-Base Voltage (collector open)VEBO: 4.0 Vdc; (4)Collector Current (continuous)IC: 20 Adc; (5)Total Device Dissipation at Tflange = 25°C PD: 159 Watts; (6)Storage Temperature Range TSTG: -40 to +150 °C.
Features
ptb20111 features: (1)25 Volt, 860–900 MHz Characteristics; (2)Class AB Characteristics; (3)Gold Metallization; (4)Silicon Nitride Passivated.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 PTB20111 |
TriQuint Semiconductor |
RF Amplifier RF Bipolar Trans |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
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PTB20001 |
TriQuint Semiconductor |
RF Amplifier RF Bipolar Trans |
Data Sheet |
Negotiable |
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PTB20002 |
TriQuint Semiconductor |
RF Amplifier RF Bipolar Trans |
Data Sheet |
Negotiable |
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PTB20003 |
TriQuint Semiconductor |
RF Amplifier RF Bipolar Trans |
Data Sheet |
Negotiable |
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|
PTB20004 |
TriQuint Semiconductor |
RF Amplifier RF Bipolar Trans |
Data Sheet |
Negotiable |
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PTB20005 |
TriQuint Semiconductor |
RF Amplifier RF Bipolar Trans |
Data Sheet |
Negotiable |
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PTB20006 |
TriQuint Semiconductor |
RF Amplifier RF Bipolar Trans |
Data Sheet |
Negotiable |
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