(Hong Kong)
Product Summary
The S29GL064N11TFIV12 is a 64-Mb 3.0-volt single-power flash memory manufactured using 110 nm MirrorBit technology. Depending on the model number, the device has 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE input. The S29GL064N11TFIV12 can be programmed either in the host system or in standard EPROM programmers.
Parametrics
S29GL064N11TFIV12 absolute maximum ratings: (1)Storage temperature, plastic packages: –65°C to +150°C; (2)Ambient temperature with power applied: –65°C to +125°C; (3)Voltage with respect to ground. VCC: –0.5 V to +4.0 V; A9, OE, ACC and RESET: –0.5 V to +12.5 V; All other pins: –0.5 V to VCC+0.5 V; (4)Output short circuit current: 200 mA.
Features
S29GL064N11TFIV12 features: (1)Advanced sector protection: Offers persistent sector protection and password sector protection; (2)Program suspend, resume: Read other sectors before programming operation is completed; (3)Erase suspend , resume: Read/Program other sectors before an erase operation is completed; (4)Data polling, toggle bits provide status; (5)CFI (common flash interface)compliant: allows host system to identify and accommodate multiple flash devices; (6)Unlock bypass program command reduces overall multiple-word programming time; (7)WP/ACC input accelerates programming time (when high voltage is applied)for greater throughput during system production. Protects first or last sector regardless of sector protection settings on uniform sector models; (8)Hardware reset input (RESET)resets device; (9)Ready/Busy output (RY/BY)detects program or erase cycle completion.
Diagrams
