Product Summary
The ste53nc50 is a powerMesh II MOSFET with N-CHANNEL 500V - 0.070W - 53A ISOTOP. It is the evolution of the first generation of MESH OVERLAY. The layout refinements introduced greatly improve the Ron area figure of merit while keeping the ste53nc50 at the leading edge for what concerns swithing speed, gate charge and ruggedness.
Parametrics
ste53nc50 absolute maximum ratings: (1)Drain-source Voltage (VGS = 0): 500 V; (2)Drain-gate Voltage (RGS = 20 kW): 500 V; (3)Gate- source Voltage: ±30 V; (4)Drain Current (continuos) at TC = 25℃: 53 A; (5)Drain Current (continuos) at TC = 100℃: 33 A; (6)Drain Current (pulsed): 212 A; (7)Total Dissipation at TC = 25℃: 460 W; (8)Derating Factor: 3.68 W/℃; (9)Peak Diode Recovery voltage slope: 3 V/ns; (10)Insulation Winthstand Voltage (AC-RMS): 2500 V; (11)Storage Temperature: – 65℃ to 150℃; (12)Max. Operating Junction Temperature: 150℃.
Features
ste53nc50 features: (1)high current, high speed switching; (2)swith mode power supplies (smps); (3)dc-ac converters for welding equipment and uninterruptible power supplies and motor driver.
Diagrams
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![]() STMicroelectronics |
![]() MOSFET N-Ch 500 Volt 53 Amp |
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![]() Transistors Bipolar (BJT) POWER MOSFET |
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![]() STE53NA50 |
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![]() STE53NC50 |
![]() STMicroelectronics |
![]() MOSFET N-Ch 500 Volt 53 Amp |
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