STP20NM50FD

stp20nm50fd, N-channel SuperMESH power MOSFET, TO-220-3, 500V, 20A, 190W, to

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Price:: US $2.30~2.50 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 100 :	2.50 / Piece
101 ~ 500 :	2.40 / Piece
501 ~ 1000 :	2.30 / Piece

PartNumber:: STP20NM50FD

Brand:: STMicroelectronics - ST | Pack: | D/C:

Availability:: Supply Ability: 8000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Total Price:: US $0

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Products Upload time: 2013-08-18

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Part Number:STP20NM50FD
US $2.30 - 2.50
Quantity:

piece

Product Summary

The stp20nm50fd is an N-channel SuperMESH power MOSFET. The stp20nm50fd is obtained through an extreme optimization of ST’s well established stripbased PowerMESH. layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh. products. The applications of the stp20nm50fd include high current, high speed switching, ideal for off-line power supplies, adaptors and PFC.

Parametrics

stp20nm50fd absolute maximum ratings: (1)Drain-source Voltage (VGS = 0), VDS: 500 V; (2)Drain-gate Voltage (RGS = 20 kW), VDGR: 500 V; (3)Gate- source Voltage, VGS: ±30 V; (4)Drain Current (continuos) at TC = 25℃, ID: 20 A; (5)Drain Current (continuos) at TC = 100℃, ID: 10A; (6)Drain Current (pulsed), IDM: 64A; (7)Total Dissipation at TC = 25℃, PTOT: 190W; (8)Derating Factor: 1.51 W/℃; (9)Gate source ESD(HBM-C=100pF, R=1.5KW), VESD(G-S): 4000 V; (10)Peak Diode Recovery voltage slope, dv/dt: 4.5 V/ns; (11)Operating Junction Temperature, Tj, Tstg: -55 to 150℃.

Features

stp20nm50fd features: (1)typical RDS(on) = 0.23 Ω; (2)extremely high dv/dt capability; (3)100% avalanche tested; (4)gate charge minimized; (5)very low intrinsic capacitances; (6)very good manufacturing repeatibility.